GaAs/A1GaAs Traveling Wave Electro-optic Modulators
نویسندگان
چکیده
A GaAs/A1GaAs traveling wave Mach-Zehnder electro-optic modulator with novel slow wave electrodes was fabricated on undoped epitaxial layers. Using appropriate electrode engineering velocity matching with matched impedance and low microwave loss was achieved. Device had a measured electrical bandwidth greater than 40 GHz at 1.55 j.un. The measured bandwidth at 1.3 j.m was 37 GHz. The mechanism limiting the bandwidth was identified as phase velocity matching rather than group velocity matching.
منابع مشابه
Bandwidth-length trade-off figures of merit for electro-optic traveling wave modulators.
Closed-form expressions explicitly relating modulation bandwidth and active length in electro-optic traveling wave modulators are presented which fully account for skin-effect electrode loss and optical-electrical wave velocities mismatch. Four operative margins have been identified where the bandwidth-length trade-off figure of merit takes simple forms.
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